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High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45V

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摘要 We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties.Thc open circuit voltage (Voc) keeps increasing logarithmically with concentration ratio until 60suns.The peak Voc of InGaN/GaN MQW solar cells,which has a predominant peak wavelength of 456nm from electroluminescence measurements,is found to be 2.45 V when the concentration ratio reaches 333×.Furthermore,the dcpendence of conversion efficiency and fill factor on concentration ratio are analyzed.
作者 ZHANG Dong-Yan ZHENG Xin-He LI Xue-Fei WU Yuan-Yuan WANG Jian-Feng YANG Hui 张东炎;郑新和;李雪飞;吴渊渊;王建峰;杨辉(Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics(SINANO),Chinese Academy of Sciences,Suzhou 215125;Graduate University of Chinese Academy of Sciences,Beijing 100190)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第6期295-298,共4页 中国物理快报(英文版)
基金 Supported by the Joint Projects under Grant Nos Y1AAQ11001 and Y1EAQ31001 the Suzhou Solar Cell Research Project under Grant No ZXJ0903 the Ministry of Science and Technology of China under Grant No 2010DFA22770.
关键词 INGAN/GAN SOLAR QUANTUM
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