摘要
End-pumped by a 976 nm diode laser,a high-repetition-rate Er:Yb:YAl3(BO3)4 microchip laser passively Q-switched by a Co2+:MgAl2 O4 crystal is reported.At a quasi-continuous-wave pump power of 20 W,a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz,pulse duration of 8.3 ns,and pulse energy of 3.9 μJ was obtained.To the best of our knowledge,the 544 kHz is the highest reported value for the 1.5 μm passively Q-switched pulse laser.In the continuous-wave pumping experiment,the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 μJ was obtained at the incident pump power of 6.3 W.
作者
Songqing Zha
Yujin Chen
Bingxuan Li
Yanfu Lin
Wenbin Liao
Yuqi Zou
Chenghui Huang
Zhanglang Lin
Ge Zhang
查松青;陈雨金;李丙轩;林炎富;廖文斌;邹宇琦;黄呈辉;林长浪;张戈(Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;Fuzhou University,Fuzhou 350002,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350108,China;Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Device,Fuzhou 350108,China)
基金
supported by the National Natural Science Foundation of China (Nos.61875199 and 61975208)
Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDB20000000)
Science and Technology Service Network Initiative of the Chinese Academy of Sciences (No.KFJ-STS-QYZX-069)。
