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Numerical study of the effect of aft-loaded magnetic field on multiple ionizations in Hall thruster

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摘要 It is assumed that the shift of a strong magnetic field region with a positive gradient from exit plane to outside, namely the transit from a normal loaded magnetic field to an aft-loaded one, enhances the multiple ionization process in the magnetically shielded Hall thruster. To confirm this conjecture, a comparative study is carried out numerically with a particle-in-cell method. The simulation results prove that compared with the normal loaded magnetic field, the application of aft-loaded magnetic field enhances the multiple ionization process. This study further analyzes the ionization characteristics of the transition from low-charged ions to high-charged ions under two magnetic field conditions and the influence of the magnetic strength of aft-loaded magnetic field on the multiple ionization characteristics. The study described herein is useful for understanding the discharge characteristics of Hall thruster with an aft-loaded magnetic field.
作者 Demai ZENG Hong LI Jinwen LIU Yongjie DING Liqiu WEI Daren YU Wei MAO 曾德迈;李鸿;刘金文;丁永杰;魏立秋;于达仁;毛威(Lab of Plasma Propulsion,Harbin Institute of Technology,Harbin 150001,People's Republic of China;Key Laboratory of Aerospace Plasma Propulsion,Ministry of Industry and Information Technology,Harbin 150001,People's Republic of China;Qingdao Haier Smart Technology,Qingdao 266100,People's Republic of China;Beijing Institute of Control Engineering,Beijing 100190,People's Republic of China)
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2022年第7期45-52,共8页 等离子体科学和技术(英文版)
基金 funded by National Natural Science Foundation of China (Nos. 52076054 and 51736003) Advanced Space Propulsion Laboratory of Beijing Institute of Control Engineering and Beijing Engineering Research Center of Efficient and Green Aerospace Propulsion Technology (No. Lab ASP2019-04) the Civil Aerospace Technology Pre-research Project (No. D03015) the Defense Industrial Technology Development Program (No. JCKY2019603B005)。
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