具有复合最后一层势垒的AlGaN基深紫外发光二极管的制备及特性研究

Study on Fabrication and Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diode with Composite Last Quantum Barrier

本文研究了AlGaN基深紫外发光二极管(DUV-LED),其由常规未掺杂的最后一层量子势垒(u-LQB)和p型掺Mg最后一层量子势垒(p-LQB)复合而成最后一层量子势垒(CLQB)。研究结果表明,通过插入p-LQB并形成具有精心优化的Mg掺杂水平的CLQB,可显著提高DUV-LED的光输出功率。基于此成果,使用优化的Mg掺入量成功制备了输出功率较高的DUV-LED,在40 mA的注入电流下,与未插入p-LQB的样品相比,DUV-LED的光输出功率增加了约30%。而且,电致发光和光致发光谱表征结果表明,DUV-LED光输出功率获得显著改善的主要原因在于电子泄漏的减少和CLQB的采用所引起的空穴注入效率的提高。

The AlGaN-based deep ultraviolet light-emitting diodes(DUV-LEDs)with a newly developed composite last quantum barrier(CLQB)comprising a conventional un-doped last quantum barrier(u-LQB)and an extra Mg-doped last quan-tum barrier(p-LQB)were studied extensively.It was demonstrated that the light output power of the DUV-LED could be im-proved significantly by inserting the p-LQB to form the CLQB with carefully optimized Mg-doping level.In fact,the light out-put power of the AlGaN-based DUV-LED with the optimized CLQB increased by approximately 30%as compared with the DUV-LEDs fabricated without the insertion of the p-LQB at an injection current of 40 mA.Furthermore,it was revealed based on the detailed characterizations with the electroluminescence and photoluminescence spectra that the achievement of remark-able improvement in light output power of the DUV-LEDs was mainly ascribed to the decrease in electron leakage and the in-crease in hole injection efficiency induced by the introduction of the CLQB.