基于双层辉光离子渗金属的离子轰击金属靶材的计算机模拟

Computer Simulation of Ion Bombardment of Targets Based on Double Glow Plasma Surface Alloying

轰击离子的产生、输运以及离子对靶材的溅射过程是实现双层辉光等离子渗金属的重要一环。基于辉光放电的理论以及COMSOL Multiphysics软件对典型的双层辉光等离子渗金属装置进行了建模,分析了轰击离子的能量范围,结合经典散射理论和蒙特卡罗方法,使用SRIM软件详细地模拟了Ar+对金属靶材的溅射过程。结果表明:溅射原子的位置集中在金属靶材入射位置的附近,形成环状的溅射坑。溅射原子的能量集中在20 eV内,随着入射离子能量的增加,会出现一些高能量、大角度的溅射原子。溅射产额随着靶材原子d壳层电子填满程度的增加而增大,溅射产额主要来自低能反冲原子。溅射产额越大意味着低能反冲原子越多,能量传递越分散,溅射原子能量越低。

The generation and transport process of bombardment ions and the sputtering process of ions on target are important parts to realize double glow plasma metallization. In this paper, on the basis of the glow discharge theory and COMSOL Multiphysics software, a typical double glow plasma metalizing device was modeled, and the energy range of bombardment ions was analyzed. Combined with the classical scattering theory and Monte Carlo method, SRIM software was used to simulate the sputtering process of Ar+on multiple metal targets. The results show that the position of sputtering atom is concentrated near the incident position of metal target, forming a circular sputtering crater. The energy of sputtered atoms is within 20 eV. With the increase of incident ion energy, some sputtered atoms with high energy and large angle appear. The sputtering yield increases with the increase of the electron filling degree of the d shell layer of target atom, and the sputtering yield mainly comes from the low-energy recoil atoms.The larger sputtering yield means that the more low energy recoil atoms, the more dispersed energy transfer and the lower sputtering atom energy.