摘要
综合论述了GaAs和GaN微波毫米波的收发多功能芯片、幅相多功能芯片和GaAs限幅放大器集成芯片的发展状况、电路结构和性能特性,简述了收发多功能中的功率放大器和低噪声放大器的设计方法、幅相多功能中数字移相器和衰减器的设计方法,给出了限幅低噪声放大器中限幅器的设计参考。
The developments,circuit topologies and performances of GaAs and GaN microwave/millimeter wave T/R multifunctional chips,amplitude-phase multifunctional chips and GaAs limiter-LNA chips were described briefly.The design methodologies of power amplifier,low noise amplifier,digital phase shifter and attenuator have been given respectively in transmitting/receiving branch and in amplitude-phase multifunctional MMIC,while the literatures are also listed for that of limiter-LNA.
作者
彭龙新
邹文静
孔令峥
张占龙
PENG Longxin;ZOU Wenjing;KONG Lingzheng;ZHANG Zhanlong(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Hangzhou Zhishan Microelectronics Technology Co.,Ltd,Hangzhou,310000,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第2期121-135,共15页
Research & Progress of SSE
