外尔半金属Co_(3)Sn_(2)S_(2)薄膜的制备和电磁性质研究

Thin film preparation and electromagnetic properties of Weyl semi⁃metallic Co_(3)Sn_(2)S_(2)

外尔半金属Co_(3)Sn_(2)S_(2)是一种新型的拓扑量子材料,具有独特的拓扑能带结构,被认为是一种非常有潜力的自旋电子材料,而制备电子器件的重要一步是该材料的薄膜化.采用磁控溅射方法分别在Si O_(2)(300 nm)/Si(100)和Al_(2)O_(3)(0001)衬底上生长Co_(3)Sn_(2)S_(2)薄膜.X射线衍射(XRD,X-ray Diffraction)显示Co_(3)Sn_(2)S_(2)薄膜的结构随厚度而变化.在不同衬底上,Co_(3)Sn_(2)S_(2)薄膜的生长情况也不同,较薄的Co_(3)Sn_(2)S_(2)(<200 nm)适合生长在Al_(2)O_(3)(0001)衬底上,而较厚的Co_(3)Sn_(2)S_(2)(~5μm)适合生长在Si O_(2)(300 nm)/Si(100)衬底上.Co_(3)Sn_(2)S_(2)纵向电阻率随着厚度的增加而增加,对导电起主要作用的表面层厚度保持在一定尺度内.

Weyl semi⁃metallic Co_(3)Sn_(2)S_(2)is a new type of topological quantum material with a unique topological band structure,which is considered to be a very potential spintronic material,and an important step in the preparation of electronic devices is the thin⁃film of the material.In this paper,the magnetron sputtering method is used to grow Co_(3)Sn_(2)S_(2)films on SiO_(2)(300 nm)/Si(100)and Al_(2)O_(3)(0001)substrates,respectively.X⁃ray diffraction(XRD,X⁃ray diffraction)shows that the structure of Co_(3)Sn_(2)S_(2)films change with the change of thicknes.The growth quality of Co_(3)Sn_(2)S_(2)films is different for different substrates,thinner Co_(3)Sn_(2)S_(2)(<200 nm)is suitable for growing on Al_(2)O_(3)(0001)substrates,while thicker Co_(3)Sn_(2)S_(2)(about 5μm)is suitable for growing on SiO_(2)(300 nm)/Si(100)substrates.The longitudinal resistivity of Co_(3)Sn_(2)S_(2)also increases with the increase of thickness,and the thickness of the surface layer,which plays the main role of conductivity,remains at a certain scale.