摘要
电镀在半导体金属化和封装工艺中扮演着重要的角色.本文综述了晶圆电镀装备的发展历程,针对电镀装备研发中涉及的表界面基础和技术问题,如金属表界面的性质、电极界面的反应、多物理场耦合等对镀层质量和均匀度的影响及其解决方案进行了概述.最后对晶圆电镀装备的未来发展进行了展望,希望对我国晶圆电镀装备的研发提供参考.
Electroplating plays an important role in semiconductor metallization and package process.In this paper,the development of wafer plating equipment is reviewed,and the interfacial problems(such as the nature of metal surface,electrode interface reaction and multi-physical field coupling)on the quality and uniformity of plating and their solutions are outlined.Finally,the future development of wafer plating equipment is presented,which is expected to provide a reference for the research and development of the wafer-plating technology and equipment.
作者
冯磊
董经纬
赖锋
郑佳兴
高润钰
游乐星
方建辉
孙建军
Lei Feng;Jing-Wei Dong;Feng Lai;Jia-Xing Zheng;Run-Yu Gao;Le-Xing You;Jian-Hui Fang;Jian-Jun Sun(College of Chemistry,Fuzhou University,Fuzhou 350108,China;College of Geography and Environmental Sciences,Zhejiang Normal University,Jinhua 321001,China;National Engineering Research Center of Chemicals for Electronics Manufacturing(Reconstruction),Xiamen University,Xiamen 361005,China;Chemical Engineering,Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM),Xiamen University,Xiamen 361005,China)
出处
《中国科学:化学》
CAS
CSCD
北大核心
2023年第10期1922-1939,共18页
SCIENTIA SINICA Chimica
基金
国家自然科学基金资助项目(编号:21874021)。
关键词
晶圆电镀
表界面基础
电镀装备
半导体
wafer plating
interfacial fundamental
plating equipment
semiconductor