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Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity 被引量:2

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摘要 Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.
出处 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第12期115-125,共11页 纳微快报(英文版)
基金 This work was supported by the National Natural Science Foundation of China(Nos.U21A20493,62104204,and 62234011) the National Key Research and Development Program of China(No.2017YFE0131500) the President’s Foundation of Xiamen University(No.20720220108).
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