氢氟酸处理InP/GaP/ZnS量子点的光学性能及其发光二极管应用

Optical Properties of InP/GaP/ZnS Quantum Dots Processed with Hydrofluoric Acid and Their Application in Light Emitting Diodes

采用氢氟酸(HF)原位注入法制备了InP/GaP/ZnS量子点。通过紫外/可见/近红外光谱、光致发光光谱、透射电镜、球差校正透射电镜、X射线衍射、X射线光电子能谱等测试手段分析了HF对InP量子点的发光性能影响。实验结果表明,HF刻蚀减少了量子点表面氧化缺陷状态,有效控制了InP核表面的氧化,并且原子配体形式的F-钝化了量子点表面的悬挂键,显著提升了量子点的光学性能。HF处理的InP/GaP/ZnS量子点具有最佳的发光性能,PLQY高达96%。此外,用HF处理InP/GaP/ZnS量子点制备的发光二极管,其发光的电流效率为6.63 cd/A,最佳外量子效率(EQE)为3.83%。

InP/GaP/ZnS quantum dots were prepared using HF in-situ injection method.The influence of HF on the lu-minescence performance of InP quantum dots was analyzed through testing methods such as UV-Vis-NIR absorption spectrum,Photoluminescence spectrum,transmission electron microscopy,spherical aberration corrected transmission electron microscope,X-ray diffraction and X-ray photoelectron spectroscopy.The experimental results show that HF etching reduces the surface oxidation defect state of quantum dots,effectively controls the oxidation of InP core surfaces,and the atomic ligand form of F-passivates the hanging bonds on the surface of quantum dots,significantly improving the optical performance of quantum dots.The HF-treated InP/GaP/ZnS quantum dots exhibit the best luminescence perfor-mance with PLQY reaching up to 96%.In addition,the light emitting diode prepared by treating InP/GaP/ZnS quantum dots with HF has a current efficiency of 6.63 cd/A and an optimal external quantum efficiency(EQE)of 3.83%.