摘要
面向高密度集成系统级封装中同步开关噪声引起的电源完整性问题,设计了一种新型电磁带隙结构。该结构由互补开口谐振环单元结构和类L-bridge型的单元间连桥结构形成,刻蚀缝隙以降低贴片的有效电容,增大连桥长宽比以增加贴片的有效电感。采用电磁全波仿真软件HFSS对所提出结构进行建模与仿真。仿真结果表明,以抑制深度-40 dB为标准,能够达到12.9 GHz的超宽禁带,明显优于常规电磁带隙结构,可以更好地抑制同步开关噪声。
To solve the power integrity problem caused by synchronous switching noise in a high-density integrated system in package,a novel electromagnetic bandgap structure was designed.The structure was formed by a complementary split-ring resonator unit structure and an L-bridge-like inter-unit bridging structure.The gap was etched to reduce the effective capacitance of the patch,and the bridge aspect ratio was increased to raise the effective inductance of the patch.The proposed structure was modeled and simulated using the electromagnetic full-wave simulation software HFSS.The simulation results show that with the suppression depth of-40 dB as the standard,an ultra-wide band gap of 12.9 GHz can be achieved,which is obviously better than the conventional electromagnetic bandgap structure and can better suppress the synchronous switching noise.
作者
李津
缪旻
LI Jin;MIAO Min(Key Laboratory of Information and Communication Systems,Ministry of Information Industry,Beijing Information Science&Technology University,Beijing 100101,China;Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument,Beijing Information Science&Technology University,Beijing 100101,China;Academy of Smart IC and Network,Beijing Information Science&Technology University,Beijing 100101,China)
出处
《北京信息科技大学学报(自然科学版)》
2024年第1期1-6,共6页
Journal of Beijing Information Science and Technology University
基金
国家自然科学基金项目(62074017)。
关键词
系统级封装
同步开关噪声
电源完整性
电磁带隙结构
system in package(SiP)
synchronous switching noise(SSN)
power integrity(PI)
electromagnetic bandgap(EBG)structure