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Profiling Electronic and Phononic Band Structures of Semiconductors at Finite Temperatures: Methods and Applications

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摘要 Semiconductor devices are often operated at elevated temperatures that are well above zero Kelvin,which is the temperature in most first-principles density functional calculations.Computational approaches to com-puting and understanding the properties of semiconductors at finite temperatures are thus in critical demand.In this review,we discuss the recent progress in computationally assessing the electronic and phononic band structures of semiconductors at finite temperatures.As an emerging semiconductor with particularly strong temperature-induced renormalization of the electronic and phononic band structures,halide perovskites are used as a representative example to demonstrate how computational advances may help to understand the band struc-tures at elevated temperatures.Finally,we briefly illustrate the remaining computational challenges and outlook promising research directions that may help to guide future research in this field.
作者 张燮 康俊 魏苏淮 Xie Zhang;Jun Kang;Su-Huai Wei(School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072,China;Beijing Computational Science Research Center,Beijing 100193,China)
出处 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第2期57-68,共12页 中国物理快报(英文版)
基金 supported by the National Natural Science Foundation of China(Grant Nos.11991060,52172136,12088101,12074029,and U2230402).
关键词 FINITE struc DIRECTIONS
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