摘要
Recently,the newly synthesized septuple-atomic layer two-dimensional(2D)material MoSi_(2)N_(4)(MSN)has attracted attention worldwide.Our work delves into the effect of vacancies and external electric fields on the electronic properties of the MSN/graphene(Gr)heterostructure using first-principles calculation.We find that four types of defective structures,N-in,N-out,Si and Mo vacancy defects of monolayer MSN and MSN/Gr heterostructure are stable in air.Moreover,vacancy defects can effectively modulate the charge transfer at the interface of the MSN/Gr heterostructure as well as the work function of the pristine monolayer MSN and MSN/Gr heterostructure.Finally,the application of an external electric field enables the dynamic switching between n-type and p-type Schottky contacts.Our work may offer the possibility of exceeding the capabilities of conventional Schottky diodes based on MSN/Gr heterostructures.
作者
梁前
罗祥燕
钱国林
王远帆
梁永超
谢泉
Qian Liang;Xiangyan Luo;Guolin Qian;Yuanfan Wang;Yongchao Liang;Quan Xie(College of Big Data and Information Engineering,Institute of New Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China)
基金
Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University(Grant No.2020-520000-83-01-324061)
the National Natural Science Foundation of China(Grant No.61264004)
the High-level Creative Talent Training Program in Guizhou Province of China(Grant No.[2015]4015).
