摘要
薄片化、细线化是太阳能硅片切割的重要发展趋势,有利于光伏行业降本增效、降低发电的度电成本。细线化切割导致硅片间距小于100μm,薄片化则降低硅片抗弯能力,因此硅片间极易发生硅片吸附贴合现象,从而增加了硅片破裂风险。为此,提出将超声波毛细效应用于电镀金刚石线硅片切割,以减少和抑制晶圆吸附。为探究平板间超声波毛细作用规律进而指导工业应用,分别研究了平行板间距、平板与超声水槽底面间距、平板间不平行、表面活性剂、工作液温度和超声作用时间对超声波毛细现象的影响规律。研究结论为工业应用提供了指导,有助于抑制晶圆吸附,减小晶圆弯曲度,降低细线切割硅片的表面裂纹损伤,提高其断裂强度。
Lamination and fineness are conducive to the photovoltaic industry to reduce cost and increase efficiency,and reduce the cost of electricity generation,which is an important development trend of solar silicon cutting.The fine line cutting results in the reduction of the distance between the silicon wafer to about 100μm,and the lamination results in the further reduction of the bending resistance of the silicon wafer,so the silicon wafer adsorption and bonding phenomenon is extremely easy to occur between the silicon wafer,thereby increasing the risk of silicon wafer rupture.In this paper,the capillary effect induced by ultrasound is used in electroplated diamond wire silicon wafer cutting to reduce the inhibition of wafer adsorption.In order to explore the law of ultrasonic capillary action between plates and guide the industrial application,the influences of parallel plate spacing,plate and ultrasonic sink bottom spacing,plate non-parallelism,working liquid temperature,ultrasonic action time on ultrasonic capillary phenomenon were studied.The rescarch results provide guidance for industrial application,which is helpful to inhibit wafer adsorption,reduce wafer bending,reduce surface crack damage and improve fracture strength of thin wire cut silicon wafers.
作者
申鲁齐
王秀枝
贾建宇
李赞
王燕青
SHEN Luqi;WANG Xiuzhi;JIA Jianyu;LI Zan;WANG Yanqing(Shanxi Key Laboratory of Precision Machining,Department of Mechanical and Vehicle Engineering,Taiyuan University of Technology,Taiyuan 030024,China)
出处
《电加工与模具》
北大核心
2024年第2期60-66,共7页
Electromachining & Mould
基金
中国博士后科学基金项目(2023M740947)。
关键词
电镀金刚石线切割
光伏硅片
超声波
毛细效应
electroplated diamond wire cutting
photovoltaic silicon wafer
ultrasonic
capillary effect