纯钨表面等离子Ta合金层耐腐蚀性能研究

Study on Corrosion Resistance of Ta Alloyed Layer on Pure Tungsten Surface by Plasma

利用双层辉光等离子表面合金化技术在纯钨表面制备Ta合金化改性层以改善材料的耐腐蚀性。研究不同温度工艺参数对Ta合金层组织结构及耐腐蚀性能的影响。结果表明:在不同温度工艺参数下均制备出连续致密的Ta合金化改性层,且随温度升高,合金层的厚度增加。合金层主要由纯Ta相组成。Ta合金层的自腐蚀电位高于基材的,而自腐蚀电流密度较低,即Ta合金层更难以发生电化学腐蚀反应且腐蚀速率更低。900℃合金层的耐蚀性能最佳,腐蚀速率降至8.45×10^(-3)g·m^(-2)·h^(-1),表现出优良的耐腐蚀性。

Ta alloying modified layer was prepared on pure tungsten surface by double glow plasma surface alloying technology to improve the corrosion resistance of the material.The effects of different temperature process parameters on the microstructure and corrosion resistance of Ta alloyed layers were studied.The results show that continuous dense Ta alloying modified layer is prepared under different temperature and process parameters.The surface thickness of the alloyed layer improves with the increase of temperature.The alloy layer is mainly composed of pure Ta phase.The self-corrosion potential of Ta alloy layer is higher than that of the substrate,while the self-corrosion current density is lower,which mean that the electrochemical corrosion reaction is more difficult and the corrosion rate is lower in Ta alloyed layer.The corrosion resistance of the alloyed layer at 900℃is best,the corrosion rate reduces to 8.45×10^(-3)g·m^(-2)·h^(-1),showing excellent corrosion resistance.