基于优化模型的纳米器件逻辑单元单粒子瞬态仿真研究

Optimized Simulation Analysisfor Single Event Transient in Nanoscale Logical Cells

空间辐射诱发的单粒子瞬态(SET)是航天电子系统可靠性的主要威胁。本文分析了现有电荷注入仿真模型的不足,提出了一种改进的结合灵敏体和双极扩散机制的电荷收集模型,综合考虑了寄生双极放大效应和电荷共享效应,可针对不同角度、不同线性能量传输值(LET)的重离子入射版图不同位置,计算获取SET平均脉宽及敏感截面分布。该方法已集成于项目组自研TREES软件,并针对商用65 nm工艺库中的多种逻辑单元开展了相关仿真计算。结果表明,该方法可在物理版图设计阶段评估单粒子瞬态截面及脉宽分布,为版图屏蔽SET设计加固提供基础参考数据。

Single event transient(SET)induced by high energy single particle radiation is the main threat to space application electronic system reliability.The evaluation and measurement of SET is the key to improve the performance of radiation hardened intergrated circuit.In view of the single event transient generated by the combined circuit,an improved circuit-level simulation method combining charge collection sensitive volume(SV)and bipolar diffusion mechanism for SET with heavy ion incidence was presented.The physics based multi-node charge collection model was built by analyzing layout characteristics such as active region geometry and heavy ion incidence angle.As the charge sharing effect and parasitic bipolar amplification effect considered,the established method which was integrated in the developed TREES software was used for evaluating SET in the 65 nm commercial cell library.The results show that the SET cross sections and pulse width distribution can be calculated and compared,which offer reference data for SET filter design.