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Co_(3)O_(4)/Fe_(2)O_(3)异质结复合材料的制备及其紫外光光电探测性能

Preparation and UV Photodetection Properties of a Co_(3)O_(4)/Fe_(2)O_(3)Heterojunction Composite
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摘要 分别采用旋涂法和水热法在FTO衬底上制备Co_(3)O_(4)种子层和Co_(3)O_(4)薄膜,再在Co_(3)O_(4)薄膜上水热生长Fe_(2)O_(3)纳米棒,获得了高质量的Co_(3)O_(4)/Fe_(2)O_(3)异质结复合材料。通过改变Fe_(2)O_(3)前驱体溶液浓度来改变异质结复合材料中Fe_(2)O_(3)组分的含量。结果表明,Fe_(2)O_(3)纳米棒覆盖在呈网状结构的Co_(3)O_(4)薄膜上,随着Fe_(2)O_(3)前驱体溶液浓度即Fe_(2)O_(3)组分含量的增加,Co_(3)O_(4)/Fe_(2)O_(3)异质结复合材料对紫外光的响应逐渐增强,当Fe_(2)O_(3)前驱体溶液浓度为0.015mol/L时,异质结复合材料有着很好的光电稳定性,并表现出较高的响应率(12.5mA/W)和探测率(4.4×10^(10)Jones)。 In this study,we prepare a Co_(3)O_(4)seed layer and thin film on an FTO substrate using spin-coating and hydrothermal methods,respectively.We then hydrothermally grow Fe_(2)O_(3)nanorods on the Co_(3)O_(4)thin film to obtain high-quality Co_(3)O_(4)/Fe_(2)O_(3)heterojunction composite materials.By changing the concentration of the Fe_(2)O_(3)precursor solution,we can alter the contents of the Fe_(2)O_(3)components in the heterojunction composite materials.Results indicated that Fe_(2)O_(3)nanorods covered the Co_(3)O_(4)thin film with a network structure.With an increase in the Fe_(2)O_(3)precursor solution concentration,the response of the Co_(3)O_(4)/Fe_(2)O_(3)heterojunction composite material to ultraviolet light gradually increased.When the concentration of the Fe_(2)O_(3)precursor solution was 0.015 mol/L,the heterojunction composite material exhibited good photoelectric stability,a high response rate(12.5mA/W),and a high detection rate(4.4×10^(10)Jones).
作者 李丽华 彭韶龙 从文博 王航 汪钰馨 黄金亮 LI Lihua;PENG Shaolong;CONG Wenbo;WANG Hang;WANG Yuxin;HUANG Jinliang(School of Materials Science and Engineering,Henan University of Science and Technology,Luoyang 471000,CHN)
出处 《半导体光电》 CAS 北大核心 2024年第3期420-425,共6页 Semiconductor Optoelectronics
关键词 Co_(3)O_(4) 紫外光电探测 Co_(3)O_(4)/Fe_(2)O_(3)复合材料 异质结 Co_(3)O_(4) UV photodetection Co_(3)O_(4)/Fe_(2)O_(3)composite heterojunction
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