Ag掺杂In_(2)O_(3)薄膜的制备及其光电性能

Preparation and Photoelectric Performance ofAg Doped In_(2)O_(3) Thin Films

为研究Ag的掺杂浓度对氧化铟薄膜禁带宽度、光开关比及光探测率等光电性能的影响,采用磁控溅射方法在石英(SiO_(2))衬底上制备不同浓度的Ag掺杂氧化铟(In_(2)O_(3)∶Ag)薄膜,并利用X射线衍射、 X射线光电子能谱、扫描电子显微镜、紫外-可见分光光度计分析In_(2)O_(3)∶Ag薄膜的晶体结构、元素含量和价态、表面形貌、禁带宽度及光电性能.结果表明:随着Ag掺杂浓度的增加,In_(2)O_(3)∶Ag薄膜的透过率逐渐降低,禁带宽度由2.47 eV减小至2.08 eV,光探测率和光开关比增大;随着掺杂浓度的增加,光谱响应范围增加.

In order to investigate the effects of Ag doping concentration on the photoelectric performance of In_(2)O_(3) thin films,such as bandgap width,optical switching ratio and optical detectivity,Ag doped In_(2)O_(3)(In_(2)O_(3)∶Ag)thin films with different concentrations were prepared by magnetron sputtering method on quartz(SiO_(2))substrate.The crystal structure,elemental content and valence state,surface morphology,bandgap width and photoelectric performance of In_(2)O_(3)∶Ag thin films were analyzed by using X-ray diffraction,X-ray photoelectron spectroscopy,scanning electron microscopy and ultraviolet-visible spectrophotometer.The results show that with the increase of Ag doping concentration,the transmittance of In_(2)O_(3)∶Ag thin films gradually decreases,the bandgap width decreases from 2.47 eV to 2.08 eV,and the optical detectivity and optical switching ratio increase.The spectral response range increases with the increase of doping concentration.