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六方Al_(4)SiC_(4)弹性性质、电子结构和光学性质的第一性原理计算

First-principles calculations of the elastic properties,electronic structure and optical properties of hexagonal Al_(4)SiC_(4)
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摘要 采用基于密度泛函理论(DFT)的第一性原理计算方法系统地研究了Al_(4)SiC_(4)的晶体结构、弹性常数、电子结构和光学性质,并对结果进行了理论分析.计算得到的晶格常数和弹性常数均与实验值及其它计算值相符,并说明了六方Al_(4)SiC_(4)的晶体结构是稳定的;计算得到了六方Al_(4)SiC_(4)的体积、剪切、杨氏模量及泊松比与文献值一致,Al_(4)SiC_(4)的禁带宽度为1.076 eV.计算得到了六方Al_(4)SiC_(4)在(100)和(001)方向上的光学响应函数随光子能量的变化关系,包括复介电函数、复折射率、吸收光谱及反射光谱.在(100)和(001)方向上,计算得到其静态介电常数分别为7.74和8.96,折射率分别为2.78和2.99.计算结果可以为相关应用提供理论依据. The crystal structure,elastic constants,electronic structure and optical properties of Al_(4)SiC_(4) have been systematically investigated using the first principles calculation method based on density functional theory.The calculated lattice constants and elastic constants are consistent with the experimental and calculated values,and it shows that the hexagonal Al_(4)SiC_(4) crystal structure is stable.The calculated bulk,shear,Young’s modulus and Poisson’s ratio of hexagonal Al_(4)SiC_(4) are in accordance with the values in the literature.The calculated band gap of the Al_(4)SiC_(4) is 1.076 eV.The changes of optical response functions of hexagonal Al_(4)SiC_(4) in the(100)and(001)directions with photon energy are calculated,including complex dielectric function,complex refractive index,absorption spectrum and reflection spectrum.In the(100)and(001)directions,the static dielectric constants are 7.74 and 8.96,respectively,and the refractive indexes are 2.78 and 2.99,respectively.The calculated results can provide theoretical basis for related applications.
作者 刘运芳 张飞跃 冯嘉怡 李文广 刘正堂 LIU Yun-Fang;ZHANG Fei-Yue;FENG Jia-Yi;LI Wen-Guang;LIU Zheng-Tang(School of Science,Guangxi University of Science and Technology,Liuzhou 545006,China;School of Physical Science and Technology,Southwest Jiaotong University,Chengdu 610031,China;School of Materials,Northwestern Polytechnical University,Xi’an 710072,China)
出处 《原子与分子物理学报》 CAS 北大核心 2025年第3期166-172,共7页 Journal of Atomic and Molecular Physics
基金 广西科技基地和人才专项项目(桂科AD19110122) 广西高校中青年教师科研基础能力提升项目(2019KY0376)。
关键词 Al_(4)SiC_(4) 电子结构 光学性质 第一性原理 Al_(4)SiC_(4) Electronic structure Optical properties First-principles
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  • 1龙光芝,陈瀛,陈敬中.晶体学与准晶体学点群的母子群关系[J].物理学报,2006,55(6):2838-2845. 被引量:1
  • 2INOUE ZENZABURO,INOMATA YOSHIZO,TANAKA HID EHIKO. X-ray crystallgraphic data on aluminum silicor carbide-Ai4SiC4 and Al4Si2C5 [J]. J Mater Sci, 1980, 15: 575-578.
  • 3INOUE K, YAMAGUCHI A. Synthesis of Al4SiC4 [J] . J Am Ceram Soc, 2003, 86: 1028-1030.
  • 4JOACHIM GROBNER , HANS LEO LUKAS , FRITZ ALDINGER. Thermalgynamic calculation of the ternary system AlSi-C [J] . Calphad, 1996, 20: 247-254.
  • 5ZHANG Shao-wei, AKIRA YAMAGUCHI. Effect of additior to carbon-containing refractories [J] . J Ceram Soc Jpn, 1995,103: 238-242.
  • 6YAMAMOTO OSAMU, OHTANI MOTOKO, SAMAMOTO TADASHI. Preparation and oxidation of Al4SiC4 [J] . J Mater Res, 2002, 17:774 - 778.
  • 7LI Shi-bo, CHENG Lai-fei, ZAHNG Li-tong. Oxidation behavior of Ti3SiC2 at high temperature in air [J] . Materials Science and Engineering A, 2003, 341: 112-120.
  • 8WANG Xaio-hui, ZHOUYan-chun. Intermediate-temperatureoxidation behavior of Ti2AlC in air [J] . J Mater Res, 2002, 17:2974-2981.
  • 9SUN Zhi-mei, ZHOU Yan-chun. High temperature oxidation behavior of Ti3SiC2-based material in air [J] . Acta Mater, 2001,49: 4347-4353.
  • 10施倪承,李国武.对称与晶体学[J].自然杂志,2008,30(1):44-49. 被引量:4

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