退火温度对ITO/Cu/AZO透明导电薄膜结构及性能的影响

Effects of Annealing Temperature on the Structure and Properties of ITO/Cu/AZO Transparent Conductive Films

采用射频与直流磁控交替溅射法在石英玻璃载玻片上制备了氧化铟锡(ITO)/Cu/Al掺杂ZnO(AZO)(45 nm/10 nm/45 nm)组合结构的透明导电薄膜,并在不同退火温度下对薄膜进行真空热处理。利用X射线衍射仪(XRD)、紫外-可见分光光度计、四探针电阻测试仪等表征手段,系统地研究了退火温度对ITO/Cu/AZO复合薄膜晶体结构和光电性能的影响。结果显示,经过不同温度的真空退火处理,薄膜的晶体结构和导电性能得到显著改善和提高,薄膜可见光平均透过率随着退火温度的升高先增加后降低。对比发现,在气压5×10^(-3)Pa、温度150℃下退火制备的ITO/Cu/AZO结构薄膜表现出最佳的综合性能,薄膜具有较强的(222)和(440)晶面衍射峰,在400~800 nm光波范围平均透过率约为80.5%,电导率约为1.76×10^(3) S/cm,综合品质因数达到约2.12×10^(-3)/Ω。

The composite transparent conductive films of indium tin oxide(ITO)/Cu/Al doped ZnO(AZO)(45 nm/10 nm/45 nm)were fabricated on quartz glass slides using the radio frequency(RF)and DC magnetron alternating sputtering method.The films were treated by vacuum heat treatment at different annealing temperatures.The effects of annealing temperature on the crystal structure and photoelectric properties of the ITO/Cu/AZO composite films were systematically studied by X-ray diffractometer(XRD),UV-VIS spectrophotometry and a fourprobe resistance tester.The results show that the crystal structure and conductivity of the films are significantly improved by vacuum annealing at different temperatures,and the average visible light transmittance of the films increases first and then decreases with the increase of annealing temperature.It is found that the ITO/Cu/AZO films prepared by annealing at a air pressure of 5×10^(-3) Pa and a temperature of 150℃show superior comprehensive properties.The films have strong diffraction peaks on the(222)and(440)crystal planes,with an average transmittance of 80.5%,conductivity of 1.77×10^(3) S/cm and the comprehensive quality factor of about 2.12×10^(-3)/Ωwithin the the light wave range of 400-800 nm.