集成电路器件微波损伤效应实验研究

Experimental study on microwave vulnerability effect of integrated circuit

主要介绍了微波脉冲参数变化对集成电路器件微波易损性的影响。实验表明:集成电路器件损伤功率阈值随着微波频率的增加而增大,随着脉冲重复频率的增加而减小。随脉冲宽度的变化较为复杂,总体是随着脉冲宽度的增加损伤功率阈值逐渐降低,但存在一拐点区域(约100ns),在此区域后,脉冲宽度增加但器件损伤功率阈值变化不甚明显。器件损伤功率阈值基本呈正态分布,且方差较小,因此,器件的损伤概率近似于0～1分布。

The microwave vulnerability effect on IC was presented in this paper. The damage power threshold of IC will decrease with the decrease of microwave frequency or the increase of pulse repetitive frequency, and if the microwave pulse width become larger, the damage power threshold will decrease too. However, there is an inflexion range and the damage power threshold varies little when the pulse width is larger than the inflexion range. Experiment results show that the damage power threshold of IC fit normal distribution, and the variance is very small, so the damage probability fits 0-1 distribution.