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IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE
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摘要 The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived. The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived.
作者 陈蔚
出处 《Acta Mathematica Scientia》 SCIE CSCD 2003年第3期386-398,共13页 数学物理学报(B辑英文版)
基金 China Postdoctoral Science Foundation
关键词 Semiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods Semiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods
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