摘要
In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.
In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.
基金
supported by the National Natural Science Foundation of China(Grant Nos.11204360 and 61210014)
the Science and Technology Planning Projects of Guangdong Province,China(Grant Nos.2014B050505020,2015B010114007,and 2014B090904045)
the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20134407110008)
the Guangzhou Municipal Science and Technology Project of Guangdong Province,China(Grant No.2016201604030027)
the Zhongshan Science and Technology Project of Guangdong Province,China(Grant No.2013B3FC0003)
