摘要
A GaAs/GaAlAs transmission photocathode surface topography is examined with a scanning electron microscope(SEM) in the secondary emission mode.The contributions of photocathode surface topography to mean transverse energy of electrons emitted from the photocathode are calculated. Measurement is made of the variation of mean transverse emission energy with activating time during the course of activation. It is shown that the scattering of the photoelectrons in the Cs/O layer is the primary cause of the unexpectant high values of the mean transverse energy of electrons emitted from GaAs/GaAlAs photocathode. A method is proposed for the reduction of the mean transverse energy of electrons emitted from the photocathode.
A GaAs/GaAlAs transmission photocathode surface topography is examined with a scanning electron microscope(SEM) in the secondary emission mode.The contributions of photocathode surface topography to mean transverse energy of electrons emitted from the photocathode are calculated. Measurement is made of the variation of mean transverse emission energy with activating time during the course of activation. It is shown that the scattering of the photoelectrons in the Cs/O layer is the primary cause of the unexpectant high values of the mean transverse energy of electrons emitted from GaAs/GaAlAs photocathode. A method is proposed for the reduction of the mean transverse energy of electrons emitted from the photocathode.
