摘要
MEMS毫米波相移器是MEMS毫米波相控阵天线的关键部件之一,它的性能直接决定了毫米波相控阵天线的性能。该文介绍毫米波MEMS相移器的设计,研究低损耗衬底,Au,AlxSi1-x可动膜对下拉电压和传输损耗的影响,测试表明:21桥相位连续可调的分布式压控开关阵列一毫米波相移器在35GHz时,启动电压5V,20V时相移量达到372°/3.5 mm,并能在不同的控制电压下根据要求改变相移量。
Several designs of MEMS millimeter-wave phase shifters are presented in this paper. They consist of a coplanar wave-guide (CPW) transmission line periodically loaded with 8 - 32 metal bridges, functioning as capacitive switches. Every switching element consists of a thin metallic membrane actuated by applied bias. Remarkable phase shifter performances were observed. 2 lAl0.96 Si0. 04 bridges MEMS Phase shifter reached to 372(/3. 5mm under 20V bias at 35 GHz, the with an insertion loss (S21) of about 4 -7 dB.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第1期49-55,共7页
Journal of East China Normal University(Natural Science)
基金
国家973项目(G1999033105)
国家杰出青年基金(69975409)
关键词
MEMS
毫米波相移器
相位连续可调
传输损耗
插入损耗
启动电压
MEMS
millimeter-wave phase shif
phase continuous adjusted
transmission loss
insertion loss
actuation voltage
