摘要
We report the temperature dependence of the spin pumping effect for Y_(3)Fe_(5)O_(12)(YIG,0.9μm)/NiO(tNiO)/W(6 nm)(tNiO=0 nm,1 nm,2 nm,and 10 nm)heterostructures.All samples exhibit a strong temperature-dependent inverse spin Hall effect(ISHE)signal I_(c)and sensitivity to the NiO layer thickness.We observe a dramatic decrease of I_(c)with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W.In contrast to the noticeable enhancement in YIG/NiO(tNiO≈1-2 nm)/Pt,the suppression of spin transport may be closely related to the specific interface-dependent spin scattering,spin memory loss,and spin conductance at the NiO/W interface.Besides,the I_(c)of YIG/Ni O/W exhibits a maximum near the TNof the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.
作者
倪丽君
王文强
金立川
叶建东
巩贺贺
战翔
陈振东
张龙龙
代兴泽
黎遥
张荣
杨燚
张怀武
刘荣华
陈丽娜
徐永兵
Lijun Ni;Wenqiang Wang;Lichuan Jin;Jiandong Ye;Hehe Gong;Xiang Zhan;Zhendong Chen;Longlong Zhang;Xingze Dai;Yao Li;Rong Zhang;Yi Yang;Huaiwu Zhang;Ronghua Liu;Lina Chen;Yongbing Xu(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Jiangsu Provincial Key Laboratory for Nanotechnology,School of Physics,Nanjing University,Nanjing 210093,China;Jiangsu Key Laboratory of Opto-Electronic Technology,Center for Quantum Transport and Thermal Energy Science,School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China;School of Science,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;York-Nanjing Joint Centre for Spintronics and NanoEngineering,Department of Electronic Engineering,University of York,York YO105DD,United Kingdom)
基金
support from the National Natural Science Foundation of China(Grant Nos.11774160,61427812,61805116,12004171,61774081,and 62171096)
the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20192006)
the National Key Scientific Instrument and Equipment Development Project of China(Grant No.51827802)
the Natural Science Foundation of Jiangsu Province of China(Grant Nos.BK20180056 and BK20200307)
the Applied Basic Research Programs of the Science and Technology Commission Foundation of Jiangsu Province,China(Grant No.BK20200309)
the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology,the Scientific Foundation of Nanjing University of Posts and Telecommunications(NUPTSF)(Grant No.NY220164)
the State Key R&D Project of Guangdong,China(Grant No.2020B010174002)
