In-plane current-induced magnetization reversal of Pd/CoZr/MgO magnetic multilayers

High critical current density(>10^(6)A/cm^(2))is one of major obstacles to realize practical applications of the currentdriven magnetization reversal devices.In this work,we successfully prepared Pd/CoZr(3.5 nm)/MgO thin films with large perpendicular magnetic anisotropy and demonstrated a way of reducing the critical current density with a low out-of-plane magnetic field in the Pd/CoZr/MgO stack.Under the assistance of an out-of-plane magnetic field,the magnetization can be fully reversed with a current density of about 10^(4)A/cm^(2).The magnetization reversal is attributed to the combined effect of the out-of-plane magnetic field and the current-induced spin-orbital torque.It is found that the current-driven magnetization reversal is highly relevant to the temperature owing to the varied spin-orbital torque,and the current-driven magnetization reversal will be more efficient in low-temperature range,while the magnetic field is helpful for the magnetization reversal in high-temperature range.