期刊文献+

Molecular beam epitaxy growth of quantum devices

下载PDF
导出
摘要 The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment.Here,I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum.The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.
作者 Ke He 何珂(State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Beijing Institute of Quantum Information Science,Beijing 100193,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第12期430-433,共4页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant No.92065206)
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部