应用于电力系统的SiC MOSFET器件开关特性优化控制方法

Optimized Control Method for Switching Characteristics of SiC MOSFET Devices Applied to Power Systems

SiC MOSFET器件具有电压等级高、功率密度大、耐高温的特点,已经逐渐应用到电力电子变压器等高压大容量电力电子装置中。然而,SiC MOSFET高速开关过程对寄生参数非常敏感,容易导致严重的电压电流尖峰、开关振荡等现象,EMI问题突显,这将严重影响设备运行的稳定性和安全性。针对SiCMOSFET器件的应用问题,提出一种分级驱动控制方法,主动对开通过程的di/dt和关断过程的du/dt进行控制,从而优化SiC MOSFET的开关特性。进而,基于CREE公司的CAS300M17BM2SiCMOSFET半桥模块,搭建仿真模型和模组试验平台,开展理论分析和损耗计算,并通过仿真与试验验证该方法的有效性。

SiC MOSFET devices have high voltage,high power density,and high temperature resistance,and have been gradually applied to high-voltage large-capacity power electronic devices,such as power electronic transformers(PET).However,the high-speed switching process of SiC MOSFET is very sensitive to parasitic parameters,which may lead to severe voltage and current spikes,switching oscillations,etc.,and especially EMI problems,which will seriously affect the stability and safety of equipment.Aiming at the application problem of SiC MOSFET devices,this paper proposed a staged drive control method,which actively controlled the di/dt of the turn-on process and the du/dt of the turn-off process to optimize the switching characteristics of the SiC MOSFET.Furthermore,based on CREE’s CAS300 M17 BM2 SiC MOSFET half-bridge module,the simulation model and module test platform were built,theoretical analysis and loss calculation were carried out.The effectiveness of the method is verified by simulation and experiment.