新型复合显影金属剥离工艺的研究

Research on Metal Lift-off Process by New Composite Development Technology

金属剥离工艺因其精确的线宽控制,低晶体损伤等优点,广泛应用于半导体光电器件电极制作工艺中。表面异物残留是影响金属剥离工艺质量的主要因素。本文分析了残留物形成的原因和机理,开发了复合显影金属剥离工艺,通过改进顶层光刻胶胶型,改善了顶层光刻胶侧壁金属膜致密性。显著降低了>5μm尺寸的缺陷数量,总缺陷数量较常规金属剥离工艺降低了87.5%,提高了金属剥离工艺质量。

Metal lift-off process is widely used in the fabrication of optoelectronic semiconductor devices,because of its precise line width control,low crystal damage.The residue on the surface is the main factor affecting the quality of metal lift-off process.In this paper,the cause and mechanism of residue formation are analyzed,the metal lift-off process by new composite development technology is developed,by improving the profile of top photoresist,the density of metal film on the side wall of top pohotresist is increased.As a result,the number of defects with the size>5 um is significantly reduced,the total number of defects is reduced by 87.5%compared with conventional metal lift-off process,and the quality of metal lift-off process is improved.