第三代半导体IEC国际标准动态综述

Summary of IEC International Standards Development on Wide Bandgap Semiconductor

本文对IEC制定的第三代半导体国际标准的最新发展动态进行了综述,介绍了IEC已经发布和正在制定的标准的主要技术内容,介绍了我国在该领域首项提案的进展情况,以利于我国专家了解和参与国际标准化工作。

This paper summarizes the latest progress of IEC international standards on wide bandgap semiconductor,and introduces the main technical contents of the standards already published and currently under development as well as and the progress of China’s first standard proposal in this field.The aim is to encourage Chinese experts to understand and participate in the international standard development.