4HN碳化硅外延片标准研究

Research on the Standards of 4HN Silicon Carbide Epitaxial Wafer

本文通过介绍碳化硅材料的发展趋势,提出了碳化硅外延片标准体系建立对产业发展的意义。标准中规定了SiC同质外延片使用的衬底参数规范、外延片测试表征方法及技术规范、包装运输及储存。本标准的提出将碳化硅衬底参数与测试方法及技术规范结合,大大降低了衬底因素对产品质量的影响,促进了外延技术和产品质量的提升。

This paper points out the significance of building standards system on silicon carbide epitaxial wafer in its industry development by introducing the development trend of silicon carbide material. Substrate parameter, measurement method and technical specification of silicon carbide, packing, transportation and storage are included in the standard. This standard integrates parameters of silicon carbide substrate and technical specification, greatly reducing the influence of substrate factors on product quality and promoting the development of epitaxial technology and product quality.