封装基板高速电镀铜柱制作技术

High speed electroplating copper pillar for package substrate

集成电路封装基板是芯片的载体,也是连接芯片与外部电路的纽带。电镀铜柱是集成电路封装基板制造中的关键技术。理论上,电镀铜柱可以使用比填孔电镀更大的施镀电流密度,但是由于电镀添加剂的限制,企业目前最大使用3 A/dm^(2)的电流密度来沉积铜柱。文章筛选出了一种在高电流密度下电镀铜柱的添加剂。使用单因素试验和正交试验方法优化了该添加剂的施镀条件,在15 A/dm^(2)的高电流密度直流电下电镀75 min制作了高度为230μm,均匀性良好,高度差和dimple合格,可靠性良好的铜柱,提高了生产效率,具有较好的产业化应用的前景。

The IC package substrates is not only the load of chip,but also the bond which connects chip and external interconnections.Copper pi1 lar electroplating is the key technology of IC package substrates fabrication process.In theory,copper pillar electroplating can use higher current density than via filling electroplating,but due to the limit of additive,the maximum current density of electroplating is 3 A/dm^(2) presently.This paper screens an additive for copper pillar electroplating under high current density.Use single factor test and orthogonal test to optimize the electroplating condition of the additive and get reliable and uniform copper pillar which is electroplated with 15 A/dm^(2) current density for 75 min.The technology can improve production efficiency and its industrial application prospect of it is promising.