Ce掺杂Cu2O(Ce/Cu2O)薄膜的制备及其光电性能

Preparation and Photoelectric Properties of Ce-doped Cu2O (Ce/Cu2O) Thin Films

用NaAc与Cu(Ac)2为反应体系,采用电沉积法,在ITO上制备了Ce掺杂的Cu2O(Ce/Cu2O)薄膜。探讨了Cu(Ac)2浓度、沉积温度、沉积时间、沉积电压和溶液pH等制备条件对Cu2O样品光电性能的影响及Ce掺杂量对Cu2O薄膜光电性能的影响。结果表明,当反应液中含0.04 mol/L Cu(Ac)2、0.02 mol/L NaAc、0.0064 mmol/L CTAB、0.008 mol/L Ce(NO3)3、溶液pH为5.5、沉积温度为50℃时,在1.4 V电压下沉积40 min,即可制备形貌较好、光电压达0.3239 V的Ce/Cu2O薄膜,Ce的掺杂有着比单纯Cu2O薄膜更高的光电性能。UV-vis、XRD、SEM和EDS等表征结果显示,Ce的掺杂使得Cu2O薄膜紫外吸收峰发生蓝移、抑制了Cu2O微晶的生长、使薄膜的形貌变为叶脉较宽的星型枝叶状,样品中Ce元素质量分数和原子分数分别为22.63%和8.78%。

Cu2O thin films doped with Ce(Ce/Cu2O)were prepared on ITO with electrodeposition method using the reaction system of NaAc and Cu(Ac)2 as the main reactants.The effects of preparation conditions such as Cu(Ac)2 concentration,deposition temperature,deposition time,deposition voltage and solution pH on the photoelectric properties of the samples under simulated solar light radiation were investigated.At the same time,the effect of Ce doping amount on the photoelectric properties of Cu2O thin films was investigated.The results show that the Ce/Cu2O thin film reaches the highest photovoltage of 0.3239 V under the reaction conditions of 50℃deposition temperature,1.4 V deposition voltage for 40 min in electrolyte of containing 0.04 mol/L Cu(Ac)2,0.02 mol/L NaAc,0.0064 mmol/L CTAB,0.008 mol/L Ce(NO3)3,and solution pH 5.5.Ce doping has higher photoelectric properties than pure Cu2O thin films.The characterization results of ultraviolet-visible spectrophotometer(UV-vis),X-ray diffractometer(XRD),energy dispersive spectrometer(EDS)and scanning electron microscope(SEM)indicate that Ce doping makes the UV absorption peak of Cu2O thin film samples occur blue shift and inhibit the growth of the Cu2O crystallite,the morphology of Ce/Cu2O thin film is the shape of star branches and leaves with wider veins,the mass percentage and atomic percentage of Ce in Ce/Cu2O samples are 22.63%and 8.78%,respectively.