以Pt为催化剂生长SiC微纳米材料

Growth of SiC Micro/nano Materials With Pt as Catalyst

利用热蒸发法以Pt为催化剂制备了SiC微纳米材料,并利用XRD、SEM、Raman、PL光谱等技术手段分析表征样品。发现SiC纳米材料的生长温度约为1145℃,制备的SiC样品呈纳米线/微米花状混合结构,纳米线表面光滑,其直径范围约在15~25nm,纳米花的花冠直径约为1μm,纳米花的花茎直径约在0.3~0.5μm范围。经分析SiC微纳米材料的生长可能遵循VLS(气-液-固)生长机制。此外,光致发光结果表明,SiC微纳米材料的发光存在轻微红移。

The SiC micro/nano materials were prepared by thermal evaporation using Pt as the catalyst,and the sample was characterized by XRD,SEM,Raman and PL spectroscopies.It is found that the growth temperature of SiC nanomaterials is around 1145 oC.The prepared SiC samples have a nanowire/micron flower-like hybrid structure.The surface of the nanowires is smooth,and the diameter range is about 15~25 nm.The diameter of the nanoflowers is about 1 mm,the diameter of the flower stem of the nano flower is about 0.3~0.5 mm.The growth of SiC micro/nanomaterials may be followed by VLS(gas-liquid-solid)growth mechanism.In addition,photoluminescence results indicate a slight red shift in the SiC micro/nano materials.