p-EBL中低Al组分插入层对AlGaN基深紫外LED光电性能的影响

The influence of a low Al-composition insertion layer in p-EBL on the optical and electrical performance of DUV LEDs

对于AlGaN基深紫外发光二极管(DUV LED),高Al组分的电子阻挡层(EBL)在抑制电子泄露的同时,也不可避免地造成空穴注入效率的严重下降。在本文中,我们研究了EBL中p型掺杂的低Al组分插入层对DUV LED性能的影响,借助APSYS仿真软件对器件的光电性能、能带结构,以及载流子分布进行了系统的分析。结果表明,低Al组分插入层的引入能够降低空穴的有效势垒高度,进而提高空穴的注入效率,改善有源区中载流子的分布。此外,本文还发现p型掺杂的低Al组分插入层在EBL中的相对位置和DUV LED的性能之间有着紧密的联系。

For conventional AlGaN-based deep ultraviolet light-emitting diodes(DUV LEDs),the high Al-composition electron blocking layer(EBL),which is commonly adopted to suppress electron leakage from the active region,unavoidably results in a notable decrease of hole injection efficiency.In the paper,we study the effect of a p-doped insertion layer with low Al composition in EBL on the DUV LED performance.Utilizing APSYS software,a systematic analysis on the photoelectric performance,band diagram and carrier distribution of the device has been carried out.The results indicate that introducing a low Al-composition insertion layer can reduce the effective barrier height for holes,consequently leading to enhanced hole injection efficiency and improved carrier distribution within the active region.Furthermore,we observe a strong correlation between the relative position of the p-doped insertion layer with low Al composition in the EBL and the performance of DUV LED.