基于热阻构成分析的功率模块功率循环及短路特性研究

Research on power cycling and short-circuit tests of power modules based on thermal resistance analysis

随着半导体功率模块的性能不断突破,使得以其为核心部件的驱动电机、逆变器等功率电子系统在航空航天、电动汽车、智能制造等领域中得到了广泛应用。针对绝缘栅双极晶体管模块和碳化硅功率模块装机应用前,对热冲击应力的严酷要求,基于自主研发搭建的测量测试平台,通过结构函数方法纵向热阻构成分析技术,对绝缘栅双极晶体管模块的功率循环可靠性进行考核分析,并对碳化硅功率模块的短路鲁棒性和冲击前后的热阻特性进行研究,以期推动大功率绝缘栅双极晶体管和碳化硅功率模块的可靠性提高和国产化进程。

Power electronic systems with semiconductor power modules,such as drive motors and inverters,have been widely used in aerospace,electric vehicles,intelligent manufacturing and other fields due to the development in the performance of the modules.The harsh requirements due to electrothermal stress on insulated gate bipolar transistor(IGBT)modules and silicon carbide(SiC)power modules are brought into focus.Based on the self-developed measurement and test platform,the thermal resistance composition analysis of the structure function method is used to study the power cycling reliability of the IGBT module and the short-circuit robustness of the SiC power module.This is expected to drive reliability improvement and to boost the process of localization.