无线供能的植入式脑电刺激芯片关键技术研究进展

Recent progress of key technologies for IPT-based implantable brain stimulation IC

植入式脑电刺激技术以特异的解剖学定位点为靶点刺激病灶,在达到良好治疗效果的同时避免了药物治疗带来的全身性不良反应,被广泛应用于重大脑疾病的干预治疗中。传统采用一次性电池供能的植入式脑电刺激方案受电池体积限制,需要采用长导线来传递电刺激信号,然而这种方式增加了感染和并发症发生的风险。基于近场谐振式电感能量传输(nearfield resonant inductive power transfer,NFR-IPT)的植入式脑电刺激技术可以避免植入一次性电池和长电极引线,易于实现植入设备的全集成,因此受到国内外学者的关注,其高集成度、高效率、高可靠性成为该领域未来发展的主要方向。本文首先讨论了基于NFR-IPT的植入式脑电刺激技术的优势、系统结构和工作原理,然后重点分析了脑电刺激芯片所面临的挑战和其近年来关键技术的研究进展。最后,本文总结了现有技术中所存在的问题,并探讨了基于NFR-IPT的植入式脑电刺激技术未来可能的发展方向。

Implantable brain stimulation technology achieves brain disease intervention by stimulating specific anatomical targets.It can achieve good therapeutic effects while avoiding systemic adverse reactions caused by drug treatment,and is widely used in the intervention treatment of severe brain diseases.Traditional battery-powered implantable brain stimulation solutions are limited by the battery size,requiring long leads to transmit stimulation signals,which increases the risk of infection and complications.The implantable brain stimulation based on the near-field resonant inductive power transfer(NFR-IPT)can avoid the using of the implantation of disposable batteries and long electrode leads,and it is easy to realize the full integration of implanted devices.Therefore,this technology has attracted the great attention of researchers,and the high integration,high efficiency,and high reliability have become the main direction of future development in this field.This paper first discusses the advantages,system structure and working principle of NFR-IPT-based implantable brain stimulation,and then focuses on the analysis of the challenges faced by the stimulation IC and the research progress of its key technologies in recent years.Finally,this paper summarizes the existing problems of these technologies,and discusses the future development direction of implantable NFR-IPT-based brain stimulation.