大尺寸Micro-LED显示屏封装技术及短路问题研究

Research of packaging technology and short issue of large-size Micro-LED displays

Micro-LED显示技术被认为是继OLED之后的下一代显示技术,但由于转移效率、良率、检测等难题尚未完全解决,Micro-LED最先被应用于大尺寸LED显示屏领域。本文设计了P0.64in1 MiP灯珠结构,降低了Micro-LED应用难度,实现了4K P0.6 Micro-LED显示屏,并对屏幕短路不良进行了研究,结果表明,BT板制程中pd离子的残留是短路发生的主要原因,通过调整油墨曝光时间、增加后浸制程等工艺,有效清除残存活性Pd离子,提高了Micro-LED显示屏运行的可靠性。

Micro-LED display technology is considered as the next generation of display technology after OLED,but due to the poor efficiency and yield of mass transfer and the detection difficulty of Micro-LED,this technology was first applied to the largesize LED display.In this paper,we designed P0.64in1 MiP to reduce the difficulty of Micro-LED application and made a 4K P0.6 Micro-LED display.Besides,the short problem of the MiP is studied.The results show that the remaining active Pd ions in the process of bismaleimide triazine board is the main reason of short issue,these Pd ions can be effectively removed by adjusting the exposure time and introducing the post-dip process,and the reliability of Micro-LED display can be improved.