基于量子点对阻变存储器性能提升的研究进展

Research on the performance improvement of resistive random access memory based on quantum dots

由于传统的半导体集成电路受工艺和物理尺寸的限制,因此进一步提高它的性能变得愈加困难。与此同时,阻变存储器(RRAM)由于其结构简单、编程/擦除速度快、功耗低等优点逐渐进入人们的视野。目前,基于Ag、Cu为电极的忆阻器,研究者们认为其阻变机制是其功能层中导电细丝(CFs)的形成和破裂。然而,由于导电细丝是随机形成的,从而使得器件的开关电压参数存在一定的弥散性,因此目前忆阻器还无法代替当今传统的非易失性存储器。为了优化其开关参数的均一性,研究者提出在介质中加入金属纳米团簇的方法来限制导电细丝的位置,降低CFs形成的随机性,但由于金属纳米团簇存在颗粒尺寸不均匀、无法制备更小的纳米团簇等弊端,从而迫使研究者探索新的方法来克服金属纳米团簇的弊端并解决器件开关的弥散性。总结了使用非金属量子点掺杂的方法克服这一技术障碍,掺杂的量子点特性类似金属量子点,不仅在器件中起到局域化电场的作用,同时有效地引导导电细丝的生长方向,提高开关参数的均匀性、降低阈值电压,增强器件的保持性能,实现良好的神经突触仿生特性,而且非金属量子点可以实现更加均匀、尺寸更小、排列更加整齐。这为提高阻变存储器的性能提供了的新方法,也为器件的小型化发展提供了新思路,促进了人工神经网络的发展。

With the limited by proceeding of IC technology and physical dimension,it becomes more and more difficult to improve the performance of the integrated circuit.Resistive random access memory(RRAM),with the advantage of simple structure,fast of write and erase speed,low power,has been attracted the attention of researchers.Currently,the researcher thought the mechanism of resistive switching is due to forming and rupture of the conductance filament(CFs)based the Ag or Cu RRAM.However,the RRAM has not been to use in business.The most important reason is that the set/reset voltages are too random to replace the traditional memory.To overcome it,researchers propose the method of doping metal clusters in the function layer to localized the electric field and guide CFs growth.While,the metal cluster is inhomogeneous particle size and it is difficult to prepare smaller nanoclusters.So,a new method must be proposed to overcome this weakness.Here,we review the new direction of doping nonmetal cluster to overcome the random formation of CFs to increase the homogeneity of set/reset voltage.It could be found that it is the same function of cluster in localizing the CFs liking the metal clusters.This also could improve the homogeneity of set/reset voltage,reduce the threshold voltage,increase the retention time and provide the probability of mimic the bio-synapse.Furthermore,the nonmetal cluster could be manufactured by more uniform distribution,smaller size and more ordered arrangement.This could provide the new method to increase the performance of the RRAM and also offer the new way to improve miniaturization of devices and the development of artificial neural system.