锗硅APD探测器进展

Progress in Ge/Si APD

通过在8英寸硅衬底上直接生长锗硅单晶材料的方法,可以制作高性能的光电探测器,该类探测器已经成功实现了商业化。报道了基于CMOS制造工艺,并成功应用于光通信领域中的10 G/25 G锗硅APD探测器,探测器的带宽、灵敏度等性能在850 nm和1310 nm等波段完全超越了传统的Ⅲ-Ⅴ族材料系探测器,器件的可靠性也完全符合光通信行业标准GR-468等对有源器件的要求。该系列PD/APD探测器已经逐步实现了量产,并累计实现出货超过两百万颗。

Germanium detectors grown directly on silicon have entered the commercial phase.This paper reports on the performance of 10 G/25 G detectors that have achieved mass production in the silicon optical field.These detectors show completely superior properties to three-five group material detectors at 850 nm and 1310 nm band,and reliability performance can fully complied with GR-468 standard.