石墨烯制备新方法及其在场效应晶体管中的应用

Graphene preparation with new method and its applications in field effect transistors

石墨烯具有非常优异的电学、热学和力学性质,是一种有重要应用前景的二维新材料。单晶石墨烯具有高于商用硅片几十倍的载流子迁移率(理论可达2×10^5cm^2/V·s)以及优良的电子传输特性,在微纳电子器件领域有着重要应用前景。石墨烯基微纳电子器件的设计及性能提升得益于单晶石墨烯品质的提高,这依赖于制备方法的改进和技术新突破。从石墨烯基本特性出发,介绍了石墨烯的制备和表征方法,以微纳电子器件应用为目的,总结了当前有应用前景的石墨烯制备新方法和新工艺,包括"智能衬底"CVD法"、点籽晶"诱导生长法和"内外碳源协同"法。最后,简单介绍了石墨烯在场效应晶体管中的新应用。

Graphene is a promising two-dimensional material with the merits of excellent electrical,thermal and mechanical properties etc.Graphene is reported to possess higher carrier mobility(up to 2×10^5 cm^2/V·s)and more excellent electronic transport characteristics than the currently commercialized silicon wafer,thus attractive for applications in the field of micro/nano electronic devices.The improvement of the properties of graphene based micro/nano electronic devices depends on the increase of the quality of prepared graphene material,which is greatly associated with the optimization of the preparation methods and technologies.In this paper,the basic preparation and characterization methods were summarized,afterwards the new techniques including the"intelligent substrate"CVD method,the"point seed"inducing growth method and the"internal and external carbon source synergy"methods were introduced,for the purpose of micro/nano electronic device applications.Finally,the success of application of graphene in field-effect transistors was briefly presented.