The Electronic and Optical Properties of Vertically Stacked GaN-WS_(2) Heterostructure

The electronic structure and optical property of stacked GaN-WS_(2)heterostructure are explored with HSE06 calculation based on density functional theory.The direct band gap of GaN-WS_(2)heterostructure is 1.993 eV,which is obviously a type-II band alignment semiconductor.Furthermore,the optical property of GaN-WS_(2)heterostructure such as absorption coefficient is analyzed.These new findings enable GaN-WS_(2)heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.