六方氮化硼中缺陷态发光体的定向制备

Deterministically Fabricating Defect-bound Photon Emitters in Hexagonal Boron Nitrid

二维半导体材料及其异质结构为纳米尺度上光与物质相互作用研究和应用提供了良好的平台,而其中的缺陷结构也成为一个新的单光子发射源载体。研究了离子束辐照、硅纳米小球凸起引入局域应变、以及两种方式相结合的手段在石墨烯-六方氮化硼-石墨烯纳米异质结中产生缺陷态发光体的方法,制备了具有不同发光频谱的缺陷态发光体,且在大气环境中具有较好的发光稳定性和电场调控特性。这为开发固态单光子源器件应用提供了较为有效便捷的发法。

Two-dimensional semiconductor materials and their heterostructures provide a good platform for the study and application of the light-matter interaction at the nanoscale,and their defect structures become a new type of carriers for single photon emission.This study demonstrates the approaches of using atomic bombardment from the ion beam irradiation,local strain effect introduced by silicon nanospheres,as well as that of both combined to fabricate defect-bound photon emitters in ultrathin heterostructures of graphene-hexagonal boron nitride-graphene.Single defect-bound emitters with various emission spectral modes were prepared,exhibiting sufficient emission stability and electric field tunability in atmospheric conditions.This work provides an effective and convenient way of developing solid-state single photon source for device application.