基于130 nm CMOS工艺的X/Ku波段有源双向可衰减真延时电路

A X/Ku-band Active Bi-directional Attenuatable True Time Delay Circuit in 130nm CMOS Technology

本文采用130 nm CMOS工艺设计了一个X/Ku波段的有源双向可衰减的真延时(true time delay,TTD)电路。本设计由7个真延时单元、6个有源双向开关、6位衰减器和数字控制电路组成。为了减小功耗并拓宽带宽,采用了基于LC的人工传输线(artificial transmission lines,ATL)进行延时。使用宽带双向有源双刀双掷(double-pole double-throw,DPDT)开关来补偿开关和延时单元的损耗;在参考信号路径上使用T型和π型衰减器,以最小化时延控制过程中的幅度变化。前仿真结果显示该电路具有0-508 ps的延时,4 ps的最小有限位,以及6-18 GHz的带宽,支持双向操作,实现了31.5 dB的衰减器覆盖范围,最小步进为0.5 dB,功耗为281 mW,且在发送和接收端的增益变化仅为-3.6±3.6 dB。

This article presents the design of a variable active bi-directional attenuatable true time delay(TTD)circuit operating in the X/Ku band using 130 nm CMOS technology.The design consists of seven true delay cells,six active bidirectional switches,6-bit attenuators,and digital control circuits.To reduce power consumption and widen the bandwidth,LC-based artificial transmission lines(ATL)are employed for delay generation.Wideband double-pole double-throw(DPDT)switches are utilized to compensate for the losses in the switches and delay cells;T-type andπ-type attenuators are employed in the reference signal path to minimize amplitude variations during the delay control process.Pre-simulation results show that the circuit achieves a delay range of 0-508 ps with a minimum step size of 4 ps,a bandwidth of 6-18 GHz,supports bidirectional operation,provides a coverage range of 31.5 dB for the attenuator with a minimum step of 0.5 dB,and consumes 281 mW of power.Additionally,the gain variation at the transmit and receive ends is only-3.6±3.6 dB.