基于肖特基二极管的太赫兹变频关键技术

Key Technologies of Terahertz Frequency Conversion Based on Schottky Diode

本文回顾了当前基于肖特基二极管实现太赫兹变频的关键技术。首先介绍了二极管本征建模方面的一些突破以及寄生模型方面的改进,涉及到二极管物理基SDD本征建模、寄生参数提取方法和内部端口技术。接着介绍了两种我们新提出的二极管结构,包括二极管多指结构和二极管双势垒结构,然后总结了二极管基变频器件的设计方法和变频器的电路实现形式。最后简要概述了该领域国内外的一些重要发展方向和典型成果。

This paper reviews the key technologies of terahertz frequency conversion based on Schottky diode.Firstly,some breakthroughs in diode intrinsic modeling and improvements in parasitic modeling are introduced,including diode physical-based SDD intrinsic modeling,parasitic parameter extraction method and internal port techniques.Secondly,two kinds of proposed diode structures are introduced,including diode multi finger structure and diode double barrier structure.Then the design method of diode based frequency converters and the circuit structure commonly used in frequency converter are summarized.Finally,some important development and typical achievements in this field at home and abroad are briefly summarized.