摘要
基于GaN HEMT工艺,突破了Ka波段GaN功率MMIC建模、设计、测试等关键技术,成功研制了一款Ka波段28W GaN功率放大器MMIC。电路采用三级级联放大结构、结合功率分配及合成匹配网络,满足大功率输出要求,利用阻性网络消除奇模振荡。测试结果表明,该芯片在33~37GHz内,输出功率大于28W,功率增益大于20dB,附加效率大于25%。
Based on the GaN HEMT process,this paper breaks through the key technologies of modeling,design and testing of Ka band GaN power MMIC,and successfully develops a Ka band 28 W GaN power amplifier MMIC.The circuit adopts three-stage cascade amplifier structure,combines with power distribution and synthesis matching network to meet the requirement of high power output,and eliminates odd mode oscillation with resistance network.The test results show that the output power of the chip is greater than 28 W,the power gain is greater than 20 dB and the additional efficiency is greater than 25%at 33-37 GHz.
作者
杜鹏搏
林支慷
徐跃杭
曲韩宾
蔡树军
DU Peng-bo;LIN Zhi-kang;XU Yue-hang;QU Han-bin;CAI Shu-jun(Hebei New North China Integrated Circuit Co.LTD,Shijiazhuang 050000,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《微波学报》
CSCD
北大核心
2020年第S01期190-192,共3页
Journal of Microwaves
