功率集成电路TID加固环栅器件研究现状综述

An Overview of the Research on TID Radiation-Hardened Enclosed Layout Devices for Power Integrated Circuits

总结了标准工艺下功率集成电路中总剂量辐射(TID)加固环栅MOS器件与环栅功率器件的研究现状,归纳了不同结构形态的环栅器件的性能优劣,推荐8字形环栅MOS器件、华夫饼功率器件及回字形LDMOS器件结构用于功率集成电路的TID加固设计。同时,阐述了现有环栅MOS器件等效W/L的建模情况,提出保角变换是环栅MOS器件等效W/L精确建模的重要方法,最后还给出了环栅器件建库的基本流程。

The researches on total ionizing dose radiation-hardened enclosed layout MOS and enclosed layout power device in power integrated circuits under standard processes were summarized.The advantage and disadvantage performances of different structural forms of radiation-hardened enclosed layout devices was analyzed.8-shaped enclosed layout MOS,waffle typed layout power MOS and rectangular-shape LDMOS were recommended in power integrated circuit design.The modeling of equivalent W/L of existing radiation-hardened enclosed layout MOS devices were elaborated.Conformal transformation was an important way for accurate modeling of equivalent W/L of enclosed layout MOS devices.Finally,the basic process for building a library of enclosed layout devices was provided.