磷砷注入对沟槽MOSFET静态参数的影响

Effect of Phosphorus and Arsenic Injection on Static Parameters of Trench MOSFET

为了降低沟槽MOSFET器件导通电阻,提出了在传统沟槽MOSFET器件体区注入N型杂质的方案,优化了体区杂质浓度分布,从而降低导通电阻。经仿真验证,选择N+源区注入后注入砷,在能量为300 keV,剂量为7×10^(12)cm^(-2)条件下,特征导通电阻能降低13%,阈值电压降低21.8%;选择接触孔刻蚀后注入磷,在能量为100 keV,剂量为4×10^(12)cm^(-2)条件下,特征导通电阻降低4.3%,阈值电压几乎不变。

In order to reduce the on-resistance of the trench MOS devices,a scheme of injecting N-type impurity into the body region of the conventional trench MOS devices was proposed,and the concentration distribution of impurity in the body region was optimized to reduce the on-resistance.The simulation results show that the specific on-resistance and threshold voltage can be reduced by 13%and 21.8%respectively when arsenic is injected into the N+source area at an energy of 300 keV and a dose of 7×10^(12)cm^(-2).After the contact hole is etched,phosphorus is injected.Under the condition of energy of 100 keV and dose of 4×10^(12)cm^(-2),the specific on-resistance is reduced by 4.3%and the threshold voltage is almost unchanged.