一种CMOS毫米波双宽带可重构低噪声放大器

A CMOS Millimeter-Wave Dual-Wideband Reconfigurable Low Noise Amplifier

设计了一种双宽带毫米波低噪声放大器。该低噪声放大器可通过射频开关对无源电感重新配置,使其可以分别工作在中心频率为28 GHz和32 GHz的频段下,适用于5G毫米波通信。该可重构低噪声放大器基于55 nm CMOS工艺设计。后仿真结果表明,该可重构低噪声放大器在控制电压(V_(s))为0 V的情况下,在中心频率为28 GHz时,增益为23 dB,输入1 dB压缩点为-5.4 dBm;在-3 dB带宽26.1~32.2 GHz(6.1 GHz)内,噪声系数为4.1~4.4 dB;在V_(s)为1.2 V的情况下,在中心频率变为32 GHz时,增益为20 dB,输入1 dB压缩点为-7.5 dBm;在-3 dB带宽28~34 GHz(6 GHz)内,噪声系数为4.4~4.7 dB。芯片面积为0.70×0.55 mm^(2),在1.2 V的电源电压下功耗为25.2 mW。

A millimeter-wave dual-wideband low noise amplifier(LNA)was designed.It could reconfigure the passive inductors through RF switches,so that it could operate at the center frequencies of 28 GHz and 32 GHz,respectively,and is suitable for millimeter-wave 5G communications.The reconfigurable low noise amplifier(RLNA)has been designed in a 55-nm CMOS process.The post-simulation results show that,with a switch voltage(V_(s))of 0 V,the RLNA has a gain of 23 dB,an input 1 dB compression point(IP_(1dB))of-5.4 dBm at the center frequency of 28 GHz,and a noise figure of 4.1-4.4 dB over-3-dB bandwidth from 26.1-32.2 GHz(6.1 GHz).While with a V_(s) of 1.2 V,the RLNA achieves a gain of 20 dB,an IP_(1dB) of-7.5 dBm at the center frequency of 32 GHz,and a noise figure of 4.4-4.7 dB over-3-dB bandwidth from 28-34 GHz(6 GHz).The chip has an area of 0.70×0.55 mm^(2) and consumes 25.2 mW at a supply voltage of 1.2 V.